Payment & Shipping Terms:
|Max. Temperature:||1200C||Working Temperature:||Not More Than 1100C|
|Heating Rate:||0-20'C||Temperature Uniformity:||±5℃|
|Tube Diameter:||Customer Size||Heating Element:||Resistance Wire With Mo|
|Temperature Control:||PID Automatic Control Via SCR Power Control|
1000KW chemical vapor deposition machine,
ISO pecvd machine,
1000KW plasma enhanced chemical vapor deposition system
Plasma Enhanced Chemical Vapor Deposition PECVD System Machine
PECVD system, by ionizing atom-containing gas with microwave or radio frequency, create active plasma locally, which will react easily to deposit and form the expected thin film. It is suitable for the PECVD process, such as silicon carbide coating ceramic substrate conductivity test, controlled growth of ZnO nanostructures, ceramic capacitors(MLCC) atomosphere sintering experiment,etc.
Packing & Shipping:
Wooden box with polyfoam filled inside to ensure safe transportation.
Parcels can be sent by sea, by air, by express,etc per customer's request.
Contact Person: Maria Chen